ONE-DIMENSIONAL DISLOCATION-RELATED ELECTRONIC STATES AT THE GAAS(110)-BI(1X1) INTERFACE

We present a high-resolution electron-energy-loss-spectroscopy investigation of the GaAs(110)-Bi(1 x 1) interface system. Exploiting p- and n-type doped substrates, the Fermi-level pinning position could be related to the electronic surface states produced by the misfit dislocations of the semiconducting Bi epitaxial monolayer. For the first time electronic transitions involving one-dimensional dislocation-related states are brought into evidence, in particular after an adequate thermal treatment of the interfaces that produces a long-range ordering of the dislocations.