We present a study of Cs adatom deposition on an antimony-precovered GaAs(110) surface by means of ultraviolet photoemission and high resolution electron energy loss spectroscopy. The ordered Sb monolayer on III-V (110) represents an ideal bulk-like unrelaxed (1 x 1) substrate for alkali adsorption, useful to elucidate the role of different Cs adsorption sites and of the insulating properties of the 2D Cs layer. Cesium deposition on Sb-precovered GaAs (110) indicates the absence of clearly different adsorption sites, at variance with deposition on the bare GaAs(110) surface. One monolayer of Cs deposited on (1 x 1) Sb/GaAs(110) behaves as a semiconductor with a surface gap of 0.65 eV. The influence of the different bonding mechanism induced by the presence of an Sb intralayer does not affect the insulating properties of the 2D Cs layer.
2D cesium insulating layer deposited on Sb-precovered GaAs(110) surface / Betti, Maria Grazia; Mariani, Carlo. - In: SURFACE SCIENCE. - ISSN 0039-6028. - 377:(1997), pp. 210-214. (Intervento presentato al convegno 16th European Conference on Surface Science tenutosi a GENOA, ITALY nel SEP 09-13, 1996) [10.1016/s0039-6028(96)01355-6].
2D cesium insulating layer deposited on Sb-precovered GaAs(110) surface
BETTI, Maria Grazia;MARIANI, CARLO
1997
Abstract
We present a study of Cs adatom deposition on an antimony-precovered GaAs(110) surface by means of ultraviolet photoemission and high resolution electron energy loss spectroscopy. The ordered Sb monolayer on III-V (110) represents an ideal bulk-like unrelaxed (1 x 1) substrate for alkali adsorption, useful to elucidate the role of different Cs adsorption sites and of the insulating properties of the 2D Cs layer. Cesium deposition on Sb-precovered GaAs (110) indicates the absence of clearly different adsorption sites, at variance with deposition on the bare GaAs(110) surface. One monolayer of Cs deposited on (1 x 1) Sb/GaAs(110) behaves as a semiconductor with a surface gap of 0.65 eV. The influence of the different bonding mechanism induced by the presence of an Sb intralayer does not affect the insulating properties of the 2D Cs layer.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
