We target the nanofabrication of free-standing nanostructures made of epitaxial semiconductor material layers of high crystallinity quality and high heterostructure complexity for optical applications at the nanoscale. Here we demonstrate the fabrication method in the case of epitaxial germanium grown on a silicon substrate but the method can be applied to any heterostructure material. The nanostructures are fabricated out of planar epitaxial wafers in the form of pillars with arbitrary section and high aspect ratio by electron-beam lithography and deep reactive-ion etching. The patterned SiGe structures are then released by focused ion-beam milling of the pillar base. In this way, they become free-standing and can be relocated on a suitable substrate by using a nanomanipulator. Microscopic characterizations are ongoing to verify that the high crystal quality typical of epitaxial layers grown on a large-area substrate is preserved throughout the different fabrication steps.

Three-dimensional fabrication of free-standing epitaxial semiconductor nanostructures obtained by focused ion beam / Giliberti, Valeria; Sakat, E.; Baldassarre, Leonetta; Di Gaspare, A.; Notargiacomo, Andrea; Giovine, Ennio; Frigerio, J.; Isella, G.; Melli, M.; Weber Bargioni, A.; Aloni, S.; Sassolini, S.; Cabrini, S.; Biagioni, P.; Ortolani, Michele; Bollani, M.. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - 141:(2015), pp. 168-172. [10.1016/j.mee.2015.03.022]

Three-dimensional fabrication of free-standing epitaxial semiconductor nanostructures obtained by focused ion beam

GILIBERTI, VALERIA;BALDASSARRE, Leonetta;ORTOLANI, MICHELE;
2015

Abstract

We target the nanofabrication of free-standing nanostructures made of epitaxial semiconductor material layers of high crystallinity quality and high heterostructure complexity for optical applications at the nanoscale. Here we demonstrate the fabrication method in the case of epitaxial germanium grown on a silicon substrate but the method can be applied to any heterostructure material. The nanostructures are fabricated out of planar epitaxial wafers in the form of pillars with arbitrary section and high aspect ratio by electron-beam lithography and deep reactive-ion etching. The patterned SiGe structures are then released by focused ion-beam milling of the pillar base. In this way, they become free-standing and can be relocated on a suitable substrate by using a nanomanipulator. Microscopic characterizations are ongoing to verify that the high crystal quality typical of epitaxial layers grown on a large-area substrate is preserved throughout the different fabrication steps.
2015
3D-nanofabrication; FIB; Free-standing epitaxial; Ge nanostructures; Electrical and Electronic Engineering; Electronic, Optical and Magnetic Materials; Surfaces, Coatings and Films; Atomic and Molecular Physics, and Optics; Condensed Matter Physics
01 Pubblicazione su rivista::01a Articolo in rivista
Three-dimensional fabrication of free-standing epitaxial semiconductor nanostructures obtained by focused ion beam / Giliberti, Valeria; Sakat, E.; Baldassarre, Leonetta; Di Gaspare, A.; Notargiacomo, Andrea; Giovine, Ennio; Frigerio, J.; Isella, G.; Melli, M.; Weber Bargioni, A.; Aloni, S.; Sassolini, S.; Cabrini, S.; Biagioni, P.; Ortolani, Michele; Bollani, M.. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - 141:(2015), pp. 168-172. [10.1016/j.mee.2015.03.022]
File allegati a questo prodotto
File Dimensione Formato  
Giliberti_three-dimensional_2015.pdf

solo gestori archivio

Tipologia: Versione editoriale (versione pubblicata con il layout dell'editore)
Licenza: Tutti i diritti riservati (All rights reserved)
Dimensione 1.54 MB
Formato Adobe PDF
1.54 MB Adobe PDF   Contatta l'autore

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/793955
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 7
  • ???jsp.display-item.citation.isi??? 7
social impact