A new family of photodetectors based on hydrogenated amorphous silicon (a-Si:H) and silicon carbide (a-S1C:H) is described. They are p-i-n photodiocles whose thin layers are grown by Glow Discharge on cheap substrates as glass or flexible materials. Modulating the absorption profile in the semiconductor and the thickness of the layers, it is possible to select, during the growing process, the wavelength range where the photodetector is more sensitive. A first generation prototype of photodetectors opdmized for UV detection was tested at room temperature and with no external bias voltage, ifiuminating it with visible and vacuum-UV radiation. The results show that the measured quantum efficiency is above 15% in the 58.4-250 nm spectral range and about 300 times lower at longer wavelengths (0.05% at 700 nm). An improved second generation has been also tested in the same experimental conditions and the preliminary data exhibit a better noise level (≤ 1 pA), a higher response stability and an enhanced efficiency. A linear dependence on the radiation intensity has been verified over three orders of magnitude at 400 nm. Noise figure evaluation and response times will be also presented

Amorphous silicon thin film photodetectors with high sensitivity and selectivity in the ultraviolet spectrum / Naletto, Giampiero; Nicolosi, Piergiorgio; Pace, Emanuele; DE CESARE, Giampiero; Irrera, Fernanda; Palma, Fabrizio. - STAMPA. - 2808:(1996), pp. 605-612. (Intervento presentato al convegno EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy VII tenutosi a Denver, CO, usa nel 4 August 1996) [10.1117/12.256033].

Amorphous silicon thin film photodetectors with high sensitivity and selectivity in the ultraviolet spectrum

DE CESARE, Giampiero;IRRERA, Fernanda;PALMA, Fabrizio
1996

Abstract

A new family of photodetectors based on hydrogenated amorphous silicon (a-Si:H) and silicon carbide (a-S1C:H) is described. They are p-i-n photodiocles whose thin layers are grown by Glow Discharge on cheap substrates as glass or flexible materials. Modulating the absorption profile in the semiconductor and the thickness of the layers, it is possible to select, during the growing process, the wavelength range where the photodetector is more sensitive. A first generation prototype of photodetectors opdmized for UV detection was tested at room temperature and with no external bias voltage, ifiuminating it with visible and vacuum-UV radiation. The results show that the measured quantum efficiency is above 15% in the 58.4-250 nm spectral range and about 300 times lower at longer wavelengths (0.05% at 700 nm). An improved second generation has been also tested in the same experimental conditions and the preliminary data exhibit a better noise level (≤ 1 pA), a higher response stability and an enhanced efficiency. A linear dependence on the radiation intensity has been verified over three orders of magnitude at 400 nm. Noise figure evaluation and response times will be also presented
1996
EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy VII
amorphous-silicon detector; photodetector; UV detector; Applied Mathematics; Computer Science Applications1707 Computer Vision and Pattern Recognition; Electrical and Electronic Engineering; Electronic, Optical and Magnetic Materials; Condensed Matter Physics
04 Pubblicazione in atti di convegno::04b Atto di convegno in volume
Amorphous silicon thin film photodetectors with high sensitivity and selectivity in the ultraviolet spectrum / Naletto, Giampiero; Nicolosi, Piergiorgio; Pace, Emanuele; DE CESARE, Giampiero; Irrera, Fernanda; Palma, Fabrizio. - STAMPA. - 2808:(1996), pp. 605-612. (Intervento presentato al convegno EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy VII tenutosi a Denver, CO, usa nel 4 August 1996) [10.1117/12.256033].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/790265
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