The electrical conductivity of a-Si:H films was investigated in the temperature range 300K - 450K under an alternative electric field whose frequency was in the range 100 Hz - 6×106 Hz. Loss peaks were detected, located at a temperature dependent frequency and superimposed to a nearly linear dependence on frequency. Their amplitude has found to be sensitive to Staebler-Wronski Effect. The observed photodegradation-sensitive loss peaks have been described in terms of a Simple Pair Hopping (SPH) mechanism, involving the electronic states associated to dangling bonds, superimposed to a broadband process described by Correlated Barrier Hopping (CBH) model.
Loss Peaks in the AC Conductivity of a-Si:H / Schirone, Luigi; Guseinov, Y. a. Y. u.; DE CESARE, Giampiero; Ferrari, A.; Califano, F. P.. - STAMPA. - 258:(2011), pp. 801-806. (Intervento presentato al convegno MRS Spring Meeting; ; tenutosi a San Francisco, CA, USA; nel 13 -16 April 1993) [10.1557/PROC-258-801].
Loss Peaks in the AC Conductivity of a-Si:H
SCHIRONE, Luigi;DE CESARE, Giampiero;
2011
Abstract
The electrical conductivity of a-Si:H films was investigated in the temperature range 300K - 450K under an alternative electric field whose frequency was in the range 100 Hz - 6×106 Hz. Loss peaks were detected, located at a temperature dependent frequency and superimposed to a nearly linear dependence on frequency. Their amplitude has found to be sensitive to Staebler-Wronski Effect. The observed photodegradation-sensitive loss peaks have been described in terms of a Simple Pair Hopping (SPH) mechanism, involving the electronic states associated to dangling bonds, superimposed to a broadband process described by Correlated Barrier Hopping (CBH) model.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
