Field effect a-Si:H solar cells

In this paper we present a first realization of a Field Effect solar cell, based on the top channel configuration. The amorphous silicon p-i-n structure was deposited by PECVD on metal and TCO substrates. Thin film metal contact were conformed by photo-lithographic process. Reactive ion etching of the superficial n layer, in the area not covered by the contacts, was performed to expose the intrinsic layer. PECVD silicon nitride was deposited for passivation, finally transparent conductive oxide was deposited to form the top gate electrode. Results showing the field effect enhancement of photocarrier collection will be presented, together with characterization of silicon nitride passivation layer under high carrier density in the field effect channel.