In this work factors affecting the anisotropy (i.e., difference in vertical and lateral anodization rates) of the aluminum anodization process are investigated. By varying the electrochemical process parameters, a degree of anisotropy of about 0.6 was obtained. The structure of the aluminum porous oxide was determined by a Scanning Electron Microscope. The difference in the anodization conditions for porous aluminum oxide growth along lateral and vertical direction was determined. The developed processing technique was used for forming multilevel VLSI metallization with feature sizes of about 1.2 μm
Anisotropy of aluminum porous anodization process for VLSI planar metallization / Lazarouk, S; Baranov, I.; DE CESARE, Giampiero; Maiello, G.; Proverbio, E.; Ferrari, A.. - STAMPA. - 337:(1994), pp. 651-656. (Intervento presentato al convegno Proceedings of the 1994 MRS Spring Meeting tenutosi a San Francisco, CA, USA, null nel 4- 8 April 1994).
Anisotropy of aluminum porous anodization process for VLSI planar metallization
DE CESARE, Giampiero;
1994
Abstract
In this work factors affecting the anisotropy (i.e., difference in vertical and lateral anodization rates) of the aluminum anodization process are investigated. By varying the electrochemical process parameters, a degree of anisotropy of about 0.6 was obtained. The structure of the aluminum porous oxide was determined by a Scanning Electron Microscope. The difference in the anodization conditions for porous aluminum oxide growth along lateral and vertical direction was determined. The developed processing technique was used for forming multilevel VLSI metallization with feature sizes of about 1.2 μmI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
