In this paper, a very thin and high conductivity chromium silicide film, formed on a n-type amorphous silicon layer, is utilized as active material in a stress sensor. The sensor can be deposited directly on the stressed materials without additional packaging, avoiding the use of the adhesive resin which usually affects the device performances. Details of fabrication and characterization of sensors grown on different kind of substrates (glass, metal, ceramic and plastic) suitable for mechanical stress and pressure measurement are reported.
On The Realization Of Chromium Silicide Stress Sensor / Caputo, Domenico; DE CESARE, Giampiero; Nascetti, Augusto; Scipinotti, Riccardo. - STAMPA. - (2006), pp. 162-166. (Intervento presentato al convegno 18th Conference on Sensors and Microsystems, tenutosi a Lecce- Italy nel 8-10 february 2006).
On The Realization Of Chromium Silicide Stress Sensor
CAPUTO, Domenico;DE CESARE, Giampiero;NASCETTI, Augusto;SCIPINOTTI, RICCARDO
2006
Abstract
In this paper, a very thin and high conductivity chromium silicide film, formed on a n-type amorphous silicon layer, is utilized as active material in a stress sensor. The sensor can be deposited directly on the stressed materials without additional packaging, avoiding the use of the adhesive resin which usually affects the device performances. Details of fabrication and characterization of sensors grown on different kind of substrates (glass, metal, ceramic and plastic) suitable for mechanical stress and pressure measurement are reported.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
