The surface and in-depth chemical nature of the photoluminescent stained Si layer obtained with a novel procedure based on HF/HNO3 is presented. Oxide-free porous Si surfaces result from controlled preparation, storing and handling of samples, as revealed by parallel X-ray photoelectron spectroscopy and X-ray-induced Auger electron spectroscopy measurements, coupled with Ar+ ion sputtering. The present findings support the model for the porous layer of oxidized samples of Si grains embedded in a silica gel matrix. © 1999 Published by Elsevier Science B.V. All rights reserved.
X-ray Photoelectron Spectroscopy Characterization of Stain-Etched Luminescent Porous Silicon Films / Zanoni, Robertino; Righini, Giada; Mattogno, MARIA GRAZIA; Schirone, Luigi; Sotgiu, G.; Rallo, F.. - In: JOURNAL OF LUMINESCENCE. - ISSN 0022-2313. - STAMPA. - 80:1-4(1998), pp. 159-162. [10.1016/S0022-2313(98)00088-X]
X-ray Photoelectron Spectroscopy Characterization of Stain-Etched Luminescent Porous Silicon Films
ZANONI, Robertino;RIGHINI, GIADA;MATTOGNO, MARIA GRAZIA;SCHIRONE, Luigi;
1998
Abstract
The surface and in-depth chemical nature of the photoluminescent stained Si layer obtained with a novel procedure based on HF/HNO3 is presented. Oxide-free porous Si surfaces result from controlled preparation, storing and handling of samples, as revealed by parallel X-ray photoelectron spectroscopy and X-ray-induced Auger electron spectroscopy measurements, coupled with Ar+ ion sputtering. The present findings support the model for the porous layer of oxidized samples of Si grains embedded in a silica gel matrix. © 1999 Published by Elsevier Science B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
