Abstract Hydrogenated amorphous silicon carbon films, with relatively low hydrogen content and carbon fraction x, C/(C + Si), ranging from 0.20 to 0.57 have been deposited by RF-plasma enhanced chemical vapor deposition (PECVD) for excimer laser annealing experiments. After the laser treatments all the films show structural modifications. It has been obtained that with increasing x the crystallinity degree of the Si phase decreases, while that of the SiC phase increases and becomes predominant for x = 0.39. In the overstoichiometric samples only the c-SiC phase has been observed. In all the treated samples 3C-SiC crystallites have been detected.
Structural modification of laser annealed a-Si1-xCx:H films / Coscia, U; Ambrosone, G; Minarini, C; Parisi, Valerio; Schutzmann, S; Tebano, A.. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - 252:(2006), pp. 4493-4496. [10.1016/j.apsusc.2005.07.130]
Structural modification of laser annealed a-Si1-xCx:H films
PARISI, Valerio;
2006
Abstract
Abstract Hydrogenated amorphous silicon carbon films, with relatively low hydrogen content and carbon fraction x, C/(C + Si), ranging from 0.20 to 0.57 have been deposited by RF-plasma enhanced chemical vapor deposition (PECVD) for excimer laser annealing experiments. After the laser treatments all the films show structural modifications. It has been obtained that with increasing x the crystallinity degree of the Si phase decreases, while that of the SiC phase increases and becomes predominant for x = 0.39. In the overstoichiometric samples only the c-SiC phase has been observed. In all the treated samples 3C-SiC crystallites have been detected.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.