We report an electronic structure study on LaO1-xFxBiSe2 (x = 0.18) by means of photoelectron spectromicroscopy. The Fermi surfaces and band dispersions are basically consistent with the band-structure calculations on BiS2-based materials, indicating that the electron correlation effects may be irrelevant to describe physics of the new BiSe2 system. In LaO1-xFxBiSe2 (x = 0.18), the area of the Fermi pockets is estimated to be 0.16 +/- 0.02 per Bi, consistent with the amount of F substitution. Although the spectromicroscopy technique avoids the effect of microscale inhomogeneity for angle-resolved photoemission spectroscopy (ARPES), the ARPES spectral features are rather broad in the momentum space, indicating the likely effect of local disorder in the BiSe2 layer.
We report an electronic structure study on LaO1-xFxBiSe2 (x = 0.18) by means of photoelectron spectromicroscopy. The Fermi surfaces and band dispersions are basically consistent with the band-structure calculations on BiS2-based materials, indicating that the electron correlation effects may be irrelevant to describe physics of the new BiSe2 system. In LaO1-xFxBiSe2 (x = 0.18), the area of the Fermi pockets is estimated to be 0.16 +/- 0.02 per Bi, consistent with the amount of F substitution. Although the spectromicroscopy technique avoids the effect of microscale inhomogeneity for angle-resolved photoemission spectroscopy (ARPES), the ARPES spectral features are rather broad in the momentum space, indicating the likely effect of local disorder in the BiSe2 layer.
Electronic structure ofLaO1−xFxBiSe2(x=0.18)revealed by photoelectron spectromicroscopy / Saini, Naurang Lal; Ootsuki, D.; Paris, E.; Joseph, B.; Barinov, A.; Tanaka, M.; Takano, Y.; Mizokawa, T.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - 90:(2014). [10.1103/PhysRevB.90.214517]
Electronic structure ofLaO1−xFxBiSe2(x=0.18)revealed by photoelectron spectromicroscopy
SAINI, Naurang Lal;E. Paris;
2014
Abstract
We report an electronic structure study on LaO1-xFxBiSe2 (x = 0.18) by means of photoelectron spectromicroscopy. The Fermi surfaces and band dispersions are basically consistent with the band-structure calculations on BiS2-based materials, indicating that the electron correlation effects may be irrelevant to describe physics of the new BiSe2 system. In LaO1-xFxBiSe2 (x = 0.18), the area of the Fermi pockets is estimated to be 0.16 +/- 0.02 per Bi, consistent with the amount of F substitution. Although the spectromicroscopy technique avoids the effect of microscale inhomogeneity for angle-resolved photoemission spectroscopy (ARPES), the ARPES spectral features are rather broad in the momentum space, indicating the likely effect of local disorder in the BiSe2 layer.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
