A theoretical calculation of the K-edge spectrum of silicon was performed. A good fit with the experimental EXAFS spectrum has been obtained by using the spherical wave formalism, the actual values of the mean free path and the Debye-Waller terms. The relevant multiple scattering contribution in the first 70 eV of the spectrum has been obtained by subtraction of a simulated EXAFS spectrum from the experimental one.

SPHERICAL WAVES EXAFS AND MULTIPLE-SCATTERING EFFECTS IN XANES OF THE K-EDGE SPECTRUM OF SILICON / Dicicco, A; Pavel, Nicolae Viorel; Bianconi, Antonio; Benfatto, M; Natoli, Cr. - In: JOURNAL DE PHYSIQUE. - ISSN 0302-0738. - STAMPA. - 47(1986), pp. 71-74.

SPHERICAL WAVES EXAFS AND MULTIPLE-SCATTERING EFFECTS IN XANES OF THE K-EDGE SPECTRUM OF SILICON

PAVEL, Nicolae Viorel;BIANCONI, Antonio;
1986

Abstract

A theoretical calculation of the K-edge spectrum of silicon was performed. A good fit with the experimental EXAFS spectrum has been obtained by using the spherical wave formalism, the actual values of the mean free path and the Debye-Waller terms. The relevant multiple scattering contribution in the first 70 eV of the spectrum has been obtained by subtraction of a simulated EXAFS spectrum from the experimental one.
File allegati a questo prodotto
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11573/77216
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 12
  • ???jsp.display-item.citation.isi??? ND
social impact