A theoretical calculation of the K-edge spectrum of silicon was performed. A good fit with the experimental EXAFS spectrum has been obtained by using the spherical wave formalism, the actual values of the mean free path and the Debye-Waller terms. The relevant multiple scattering contribution in the first 70 eV of the spectrum has been obtained by subtraction of a simulated EXAFS spectrum from the experimental one.
SPHERICAL WAVES EXAFS AND MULTIPLE-SCATTERING EFFECTS IN XANES OF THE K-EDGE SPECTRUM OF SILICON / Dicicco, A; Pavel, Nicolae Viorel; Bianconi, Antonio; Benfatto, M; Natoli, Cr. - In: JOURNAL DE PHYSIQUE. - ISSN 0302-0738. - STAMPA. - 47:(1986), pp. 71-74.
SPHERICAL WAVES EXAFS AND MULTIPLE-SCATTERING EFFECTS IN XANES OF THE K-EDGE SPECTRUM OF SILICON
PAVEL, Nicolae Viorel;BIANCONI, Antonio;
1986
Abstract
A theoretical calculation of the K-edge spectrum of silicon was performed. A good fit with the experimental EXAFS spectrum has been obtained by using the spherical wave formalism, the actual values of the mean free path and the Debye-Waller terms. The relevant multiple scattering contribution in the first 70 eV of the spectrum has been obtained by subtraction of a simulated EXAFS spectrum from the experimental one.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
