We investigated atomic ordering in In-rich InxGa1−xN epilayers in order to obtain an understanding of whether a deviation from a random distribution of In atoms in the group-III sublattice could be the origin of the strong carrier localization and defect-insensitive emission of these semiconductor alloys. This phenomenon can be exploited for application in optoelectronics. By coupling In K-edge x-ray absorption spectroscopy and high resolution x-ray diffraction, we were able to discard the hypothesis of significant phase separation into InN + GaN, in agreement with previous N K-edge absorption spectroscopy. However, we found an enrichment of In neighbours in the second atomic shell of In as compared to random statistics (clustering) for x = 0.82, while this is not the case for x = 0.46. This result, which is also supported by optical spectroscopy, is likely to stimulate new theoretical studies on InxGa1−xN alloys with a very high In concentration.
Quantitative determination of In clustering in In-rich InxGa1−xN thin films / Xiaoxia, Shang; DE LUCA, Marta; Pettinari, Giorgio; Gabriele, Bisognin; Lucia, Amidani; Emiliano, Fonda; Federico, Boscherini; Marina, Berti; Gianluca, Ciatto. - In: JOURNAL OF PHYSICS D. APPLIED PHYSICS. - ISSN 0022-3727. - 47:(2014), p. 415301. [10.1088/0022-3727/47/41/415301]
Quantitative determination of In clustering in In-rich InxGa1−xN thin films
DE LUCA, MARTA;PETTINARI, GIORGIO;
2014
Abstract
We investigated atomic ordering in In-rich InxGa1−xN epilayers in order to obtain an understanding of whether a deviation from a random distribution of In atoms in the group-III sublattice could be the origin of the strong carrier localization and defect-insensitive emission of these semiconductor alloys. This phenomenon can be exploited for application in optoelectronics. By coupling In K-edge x-ray absorption spectroscopy and high resolution x-ray diffraction, we were able to discard the hypothesis of significant phase separation into InN + GaN, in agreement with previous N K-edge absorption spectroscopy. However, we found an enrichment of In neighbours in the second atomic shell of In as compared to random statistics (clustering) for x = 0.82, while this is not the case for x = 0.46. This result, which is also supported by optical spectroscopy, is likely to stimulate new theoretical studies on InxGa1−xN alloys with a very high In concentration.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
