An analog dynamic dead time generator for synchronous boost converters based on GaN transistors is presented. A prototype was designed to operate at switching frequencies in the MHz range, with wide variations of the output voltage, and experimentally demonstrated its capability to stabilize the dead time duration to a few nanoseconds, independent of wide variations of the switching times of the transistor in use. © 2014 IEEE.
Dead time generator for synchronous boost converters with GaN transistors / Macellari, Michele; Celani, Fabio; Schirone, Luigi. - STAMPA. - (2014). (Intervento presentato al convegno 2014 IEEE International Electric Vehicle Conference tenutosi a Florence; Italy) [10.1109/IEVC.2014.7056113].
Dead time generator for synchronous boost converters with GaN transistors
MACELLARI, MICHELE;CELANI, FABIO;SCHIRONE, Luigi
2014
Abstract
An analog dynamic dead time generator for synchronous boost converters based on GaN transistors is presented. A prototype was designed to operate at switching frequencies in the MHz range, with wide variations of the output voltage, and experimentally demonstrated its capability to stabilize the dead time duration to a few nanoseconds, independent of wide variations of the switching times of the transistor in use. © 2014 IEEE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
