We present a detailed infrared study of the semiconductor-to-metal transition (SMT) in a vanadium dioxide (VO2) film deposited on silicon wafer. The VO phase transition is studied in 2 2 the mid-infrared region by analyzing the transmittance and the reflectance measurements, and the calculated emissivity. The reflectance has been measured in two configurations: from the side of film and from that of Si wafer. The results show a strong asymmetry between the the VO 2 emissivity in the two configurations, and the fact that the emissivity dynamic range from the silicon side is twice as large than that from the VO2 side. The temperature behaviour of the 2 emissivity during the SMT put into evidence the phenomenon of the anomalous absorption in VO2, which has been explained by applying the Maxwell Garnett effective medium 2 approximation theory

Anomalous optical switching and thermal hysteresis during semiconductor-metal phase transition of VO2 films on Si substrate / Leahu, Grigore; LI VOTI, Roberto; Sibilia, Concetta; Bertolotti, Mario. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 103:(2013), pp. 231114-1-231114-5. [10.1063/1.4838395]

Anomalous optical switching and thermal hysteresis during semiconductor-metal phase transition of VO2 films on Si substrate

LEAHU, GRIGORE;LI VOTI, Roberto;SIBILIA, Concetta;BERTOLOTTI, Mario
2013

Abstract

We present a detailed infrared study of the semiconductor-to-metal transition (SMT) in a vanadium dioxide (VO2) film deposited on silicon wafer. The VO phase transition is studied in 2 2 the mid-infrared region by analyzing the transmittance and the reflectance measurements, and the calculated emissivity. The reflectance has been measured in two configurations: from the side of film and from that of Si wafer. The results show a strong asymmetry between the the VO 2 emissivity in the two configurations, and the fact that the emissivity dynamic range from the silicon side is twice as large than that from the VO2 side. The temperature behaviour of the 2 emissivity during the SMT put into evidence the phenomenon of the anomalous absorption in VO2, which has been explained by applying the Maxwell Garnett effective medium 2 approximation theory
2013
01 Pubblicazione su rivista::01a Articolo in rivista
Anomalous optical switching and thermal hysteresis during semiconductor-metal phase transition of VO2 films on Si substrate / Leahu, Grigore; LI VOTI, Roberto; Sibilia, Concetta; Bertolotti, Mario. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 103:(2013), pp. 231114-1-231114-5. [10.1063/1.4838395]
File allegati a questo prodotto
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/758859
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 52
  • ???jsp.display-item.citation.isi??? 48
social impact