An analysis of the conductivity of a-Si:H films under and alternating electric field in an wide frequency and temperature range is reported in this work. The results indicate that the frequency compensating effect shown inte high temperature range is well known in polymeric semiconductors and was also observed in Bi2O3 films. It is confirmed that it is a characteristic property of disordered high-resistive semiconducting systems. This behavior can be predicted on the basis of the correlated barrier hopping model for the ac charge transport in isulators

the conductivity peculiarities in a-Si thin films / Guseinov, Y. A. Y. U.; Schirone, Luigi. - In: PHYSICA STATUS SOLIDI. A, APPLIED RESEARCH. - ISSN 0031-8965. - (1993), pp. k13-k16.

the conductivity peculiarities in a-Si thin films

SCHIRONE, Luigi
1993

Abstract

An analysis of the conductivity of a-Si:H films under and alternating electric field in an wide frequency and temperature range is reported in this work. The results indicate that the frequency compensating effect shown inte high temperature range is well known in polymeric semiconductors and was also observed in Bi2O3 films. It is confirmed that it is a characteristic property of disordered high-resistive semiconducting systems. This behavior can be predicted on the basis of the correlated barrier hopping model for the ac charge transport in isulators
1993
01 Pubblicazione su rivista::01a Articolo in rivista
the conductivity peculiarities in a-Si thin films / Guseinov, Y. A. Y. U.; Schirone, Luigi. - In: PHYSICA STATUS SOLIDI. A, APPLIED RESEARCH. - ISSN 0031-8965. - (1993), pp. k13-k16.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/75770
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