We studied Ti in-diffusion as an effect of multipulse laser irradiation, in either visible of ultraviolet (u.v.) spectral ranges, of LiNbO3 single-crystalline structures with Ti coatings of two different thicknesses. It is shown that while u.v. (excimer, lambda almost-equal-to 308 nm) laser irradiation causes a complete expulsion of the Ti deposit, the visible (ruby, lambda almost-equal-to 694.3 nm) laser irradiation at intermediate incident laser fluence (up to almost-equal-to 0.7 J cm-2) promotes efficient Ti in-diffusion from the thin (400 angstrom width) Ti deposit down to a micrometre range implantation depth.
ONE-step in-diffusion as a result of multipulse laser irradiation of LINbO3 single-crystalline substrates covered with thin Ti depositions: on the effect of the radiation wavelength / Ferrari, A., Schirone, L., G., M., DE CESARE, G., F., C., M., B., M. A., C., A., L., M., M., M., D., N., C., J. N., M., J., U.. - In: JOURNAL OF MODERN OPTICS. - ISSN 0950-0340. - STAMPA. - 6:6(1993), pp. 1043-1052. [10.1080/09500349314551121]
ONE-step in-diffusion as a result of multipulse laser irradiation of LINbO3 single-crystalline substrates covered with thin Ti depositions: on the effect of the radiation wavelength.
FERRARI, Aldo;SCHIRONE, Luigi;DE CESARE, Giampiero;
1993
Abstract
We studied Ti in-diffusion as an effect of multipulse laser irradiation, in either visible of ultraviolet (u.v.) spectral ranges, of LiNbO3 single-crystalline structures with Ti coatings of two different thicknesses. It is shown that while u.v. (excimer, lambda almost-equal-to 308 nm) laser irradiation causes a complete expulsion of the Ti deposit, the visible (ruby, lambda almost-equal-to 694.3 nm) laser irradiation at intermediate incident laser fluence (up to almost-equal-to 0.7 J cm-2) promotes efficient Ti in-diffusion from the thin (400 angstrom width) Ti deposit down to a micrometre range implantation depth.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
