An analysis of the conductivity of a-Si:H films under and alternating electric field in an wide frequency and temperature range is reported in this work. The results indicate that the frequency compensating effect shown inte high temperature range is well known in polymeric semiconductors and was also observed in Bi2O3 films. It is confirmed that it is a characteristic property of disordered high-resistive semiconducting systems. This behavior can be predicted on the basis of the correlated barrier hopping model for the ac charge transport in isulators
Frequency-compensating effect in the AC conductivity of a-Si:H / GUSEINOV YA, Yu; Schirone, Luigi; Ferrari, A.; Califano, F. P.. - In: PHYSICA STATUS SOLIDI. A, APPLIED RESEARCH. - ISSN 0031-8965. - (1991).
Frequency-compensating effect in the AC conductivity of a-Si:H
SCHIRONE, Luigi;
1991
Abstract
An analysis of the conductivity of a-Si:H films under and alternating electric field in an wide frequency and temperature range is reported in this work. The results indicate that the frequency compensating effect shown inte high temperature range is well known in polymeric semiconductors and was also observed in Bi2O3 films. It is confirmed that it is a characteristic property of disordered high-resistive semiconducting systems. This behavior can be predicted on the basis of the correlated barrier hopping model for the ac charge transport in isulatorsI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
