The surface and in-depth chemical nature of the photoluminescent stained Si layer obtained with a novel procedure based on HF/HNO3 is presented. Oxide-free porous Si surfaces result from controlled preparation, storing and handling of samples, as revealed by parallel X-ray photoelectron spectroscopy and X-ray-induced Auger electron spectroscopy measurements, coupled with Ar+ ion sputtering. The present findings support the model for the porous layer of oxidized samples of Si grains embedded in a silica gel matrix.
x-ray luminescence spectroscopy characterisation of stain-etched luminescent porous silicon films / Zanoni, Robertino; Righini, G.; Mattogno, G.; Schirone, Luigi; Sotgiu, G.; Rallo, F.. - In: JOURNAL OF LUMINESCENCE. - ISSN 0022-2313. - 80:(1999).
x-ray luminescence spectroscopy characterisation of stain-etched luminescent porous silicon films
ZANONI, Robertino;SCHIRONE, Luigi;
1999
Abstract
The surface and in-depth chemical nature of the photoluminescent stained Si layer obtained with a novel procedure based on HF/HNO3 is presented. Oxide-free porous Si surfaces result from controlled preparation, storing and handling of samples, as revealed by parallel X-ray photoelectron spectroscopy and X-ray-induced Auger electron spectroscopy measurements, coupled with Ar+ ion sputtering. The present findings support the model for the porous layer of oxidized samples of Si grains embedded in a silica gel matrix.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
