Porous Silicon was formed on mono- and poly-crystalline Si substrates by stain etching in aqueous HF/HNO3 solutions. Optical properties of the resulting films have been investigated by reflectance spectroscopy and have been related to process parameters, e.g. HF, HNO3 concentration and etching time. Film morphology has been investigated by High Resolution Electron Microscopy (HREM). Porous Si films allowed to reduce surface reflectance to under 2% in 550-700 nm wavelength range. Efficient anti-reflection coatings were developed and used in large area solar cells: photovoltaic conversion efficiency higher than 12% was obtained by 12.8×12.8 cm2 polycrystalline devices under standard AM1.5G simulated sunlight.
optical and morphological properties of stain etched porous silicon films for anti reflection coatings of photovoltaic devices / Schirone, Luigi; Sotgiu, G.; Parisini, A.; Montecchi, M.. - In: DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA. - ISSN 1012-0394. - 54:(1997), pp. 59-64.
optical and morphological properties of stain etched porous silicon films for anti reflection coatings of photovoltaic devices
SCHIRONE, Luigi;
1997
Abstract
Porous Silicon was formed on mono- and poly-crystalline Si substrates by stain etching in aqueous HF/HNO3 solutions. Optical properties of the resulting films have been investigated by reflectance spectroscopy and have been related to process parameters, e.g. HF, HNO3 concentration and etching time. Film morphology has been investigated by High Resolution Electron Microscopy (HREM). Porous Si films allowed to reduce surface reflectance to under 2% in 550-700 nm wavelength range. Efficient anti-reflection coatings were developed and used in large area solar cells: photovoltaic conversion efficiency higher than 12% was obtained by 12.8×12.8 cm2 polycrystalline devices under standard AM1.5G simulated sunlight.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
