There is a considerable interest for the development of Si colour sensors. Among the various methods of production of such sensors, we propose to use Porous Silicon multilayers as filtering elements. Porous Silicon Bragg Reflectors have been produced by using different current steps during anodization. In this way, stacked layers with different porosity and refraction index can be easily produced. Even if, at the present stage, these filters suffer from stability problems they are ready to be used in colour sensing devices. A method for integrating Porous Silicon Bragg Reflectors on a single chip is proposed and the compatibility of Porous Silicon technology with the current CMOS technology discussed.
porous silicon bragg reflectors for colour sensing applications / Amato, G.; Schirone, Luigi. - In: DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA. - ISSN 1012-0394. - 54:(1997), pp. 50-54.
porous silicon bragg reflectors for colour sensing applications
SCHIRONE, Luigi
1997
Abstract
There is a considerable interest for the development of Si colour sensors. Among the various methods of production of such sensors, we propose to use Porous Silicon multilayers as filtering elements. Porous Silicon Bragg Reflectors have been produced by using different current steps during anodization. In this way, stacked layers with different porosity and refraction index can be easily produced. Even if, at the present stage, these filters suffer from stability problems they are ready to be used in colour sensing devices. A method for integrating Porous Silicon Bragg Reflectors on a single chip is proposed and the compatibility of Porous Silicon technology with the current CMOS technology discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
