Porous silicon layers were prepared by electrochemical anodization of Si wafers in aqueous hydrofluoric acid solutions containing surfactants instead of ethanol. Mono- and poly-crystalline Si substrates, n(+) - and p-doped were anodised in aqueous HF solutions containing cationic or anionic surfactants, with the same electrochemical conditions but varying the surfactant type and concentration. Surfactant levels below and above the critical micellar concentration were studied. Under optimum conditions a uniform and bright photoluminescence is obtained from anodised n(+)-type mono-crystalline and p-type poly-crystalline materials, with slight differences in the positions of PL maxima. The resulting porous Si samples have been also characterised by Raman spectroscopy. (C) 1997 Elsevier Science S.A.
On the use of surfactants in the electrochemical preparation of porous silicon / Giovanni, Sotgiu; Schirone, Luigi; Franco, Rallo. - In: THIN SOLID FILMS. - ISSN 0040-6090. - 297:1-2(1997), pp. 18-21. (Intervento presentato al convegno Symposium L: New Developments in Porous Silicon: Relation with other Nanostructures at the European-Materials-Society 1996 Spring Meeting tenutosi a STRASBOURG, FRANCE nel JUN 04-07, 1996) [10.1016/s0040-6090(96)09435-7].
On the use of surfactants in the electrochemical preparation of porous silicon
SCHIRONE, Luigi;
1997
Abstract
Porous silicon layers were prepared by electrochemical anodization of Si wafers in aqueous hydrofluoric acid solutions containing surfactants instead of ethanol. Mono- and poly-crystalline Si substrates, n(+) - and p-doped were anodised in aqueous HF solutions containing cationic or anionic surfactants, with the same electrochemical conditions but varying the surfactant type and concentration. Surfactant levels below and above the critical micellar concentration were studied. Under optimum conditions a uniform and bright photoluminescence is obtained from anodised n(+)-type mono-crystalline and p-type poly-crystalline materials, with slight differences in the positions of PL maxima. The resulting porous Si samples have been also characterised by Raman spectroscopy. (C) 1997 Elsevier Science S.A.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.