In this contribution we give an overview of our development of size-controlled multilayered ensembles of silicon nanocrystals (Si-NCs) for efficient light emitting devices (LEDs). The ensembles of Si-NCs embedded in silicon dioxide are grown by chemical vapour deposition methods and by using standard microelectronic processes. The formation of nanocrystals is monitored by several analytical techniques. Novel LED architectures of nanocrystal ensembles which improve electrical injection and light emission are described. Charge tunnelling in nanosilicon superlattices, light emission efficiency under direct and alternating current injection, and device stability are discussed.
Electroluminescent devices based on nanosilicon multilayer structures / Anopchenko, Oleksiy; Oleksiy, Anopchenko; Alessandro, Marconi; Fabrizio, Sgrignuoli; Laura, Cattoni; Andrea, Tengattini; Georg, Pucker; Yoann, Jestin; Lorenzo, Pavesi. - In: PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE. - ISSN 1862-6300. - STAMPA. - 210:8(2013), pp. 1525-1531. [10.1002/pssa.201200957]
Electroluminescent devices based on nanosilicon multilayer structures
ANOPCHENKO, OLEKSIY;
2013
Abstract
In this contribution we give an overview of our development of size-controlled multilayered ensembles of silicon nanocrystals (Si-NCs) for efficient light emitting devices (LEDs). The ensembles of Si-NCs embedded in silicon dioxide are grown by chemical vapour deposition methods and by using standard microelectronic processes. The formation of nanocrystals is monitored by several analytical techniques. Novel LED architectures of nanocrystal ensembles which improve electrical injection and light emission are described. Charge tunnelling in nanosilicon superlattices, light emission efficiency under direct and alternating current injection, and device stability are discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
