A novel device, based on amorphous silicon technology, suitable for mechanical stress measurement is presented. Due to the low temperature fabrication process, the sensor can be deposited directly on the mechanical part to be stressed without additional packaging and ?xing procedures. The device is able to measure independently the bending force and the torsion force with good sensitivity and linearity. Moreover it can be packaged together with an integrated circuit to form a stand alone component, eventually including wireless input/output circuitry.
a-Si:H alloy for stress sensor application / Caputo, Domenico; DE CESARE, Giampiero; M., Gavesi; Palma, Fabrizio. - In: JOURNAL OF NON-CRYSTALLINE SOLIDS. - ISSN 0022-3093. - 338-340:(2004), pp. 725-728. [10.1016/j.jnoncrysol.2004.03.077]
a-Si:H alloy for stress sensor application
CAPUTO, Domenico;DE CESARE, Giampiero;PALMA, Fabrizio
2004
Abstract
A novel device, based on amorphous silicon technology, suitable for mechanical stress measurement is presented. Due to the low temperature fabrication process, the sensor can be deposited directly on the mechanical part to be stressed without additional packaging and ?xing procedures. The device is able to measure independently the bending force and the torsion force with good sensitivity and linearity. Moreover it can be packaged together with an integrated circuit to form a stand alone component, eventually including wireless input/output circuitry.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
