<100>GaAs crystals were implanted with 140 keV Zn ions at random incidence and a dose of 10(14) cm-2. Annealing by a low-power pulsed laser was used to recover the radiation damage. The samples were analysed by RHEED and RBS techniques. The effect of the annealing on the recovery of structure defects in GaAs is reported.
RHEED AND RBS ANALYSIS OF LOW-POWER LASER ANNEALED GAAS / Vitali, Gianfranco; Rossi, Marco; D., Karpuzov; H., Budinov; M., Kalitzova. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS. - ISSN 0168-583X. - 59:(1991), pp. 1077-1080. (Intervento presentato al convegno 7TH INTERNATIONAL CONF ON ION BEAM MODIFICATION OF MATERIALS ( IBMM 90 ) tenutosi a KNOXVILLE, TN nel SEP 09-14, 1990) [10.1016/0168-583x(91)95768-9].
RHEED AND RBS ANALYSIS OF LOW-POWER LASER ANNEALED GAAS
VITALI, Gianfranco;ROSSI, Marco;
1991
Abstract
<100>GaAs crystals were implanted with 140 keV Zn ions at random incidence and a dose of 10(14) cm-2. Annealing by a low-power pulsed laser was used to recover the radiation damage. The samples were analysed by RHEED and RBS techniques. The effect of the annealing on the recovery of structure defects in GaAs is reported.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
