The photoemission from chemical vapor deposited polycrystalline diamond induced by 3.5 eV photons has been investigated and compared to that of Nd-doped diamond. The different behavior observed at low radiation intensity between undoped and doped diamond is shown to be due to the different excess carrier recombination rates in the two materials. The measured quantum efficiency of similar to3 X 10(-6) in the two-photon regime, at relatively low accelerating field, makes this material interesting as photoemitter. (C) 2001 Published by Elsevier Science B.V.

Diamond and Nd-doped diamond photoemitters / Boscolo, I.; S., Cialdi; G., Benede; F., Tazzioli; M. L., Terranova; E., Rembeza; V., Sessa; S., Piccirillo; Rossi, Marco. - In: OPTICS COMMUNICATIONS. - ISSN 0030-4018. - STAMPA. - 187:(2001), pp. 179-184. [10.1016/S0030-4018(00)01078-6]

Diamond and Nd-doped diamond photoemitters

ROSSI, Marco
2001

Abstract

The photoemission from chemical vapor deposited polycrystalline diamond induced by 3.5 eV photons has been investigated and compared to that of Nd-doped diamond. The different behavior observed at low radiation intensity between undoped and doped diamond is shown to be due to the different excess carrier recombination rates in the two materials. The measured quantum efficiency of similar to3 X 10(-6) in the two-photon regime, at relatively low accelerating field, makes this material interesting as photoemitter. (C) 2001 Published by Elsevier Science B.V.
2001
photoemission; quantum efficiency; diamond
01 Pubblicazione su rivista::01a Articolo in rivista
Diamond and Nd-doped diamond photoemitters / Boscolo, I.; S., Cialdi; G., Benede; F., Tazzioli; M. L., Terranova; E., Rembeza; V., Sessa; S., Piccirillo; Rossi, Marco. - In: OPTICS COMMUNICATIONS. - ISSN 0030-4018. - STAMPA. - 187:(2001), pp. 179-184. [10.1016/S0030-4018(00)01078-6]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/69506
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