Many nano-material systems are currently under consideration as possible candidates for gate dielectric insulators in both metal-oxide-semiconductor (MOSFET) and organic (OFET) field-effect transistors. In this contribution, the possibility of employing self-assembled monolayers (SAMs) of hydroxylated octadecyltrichlorosilane (OTS) chains on a (111) Si substrate as gate dielectrics is discussed; in particular ab initio theoretical simulations have been employed to study the structural properties, work function modifications, and the insulating properties of OTS thin film coatings on Si substrates. © 2014 AIP Publishing LLC.
Atomistic characterization of SAM coatings as gate insulators in Si-based FET devices / Gala, Fabrizio; Zollo, Giuseppe. - STAMPA. - 1603:(2014), pp. 3-13. (Intervento presentato al convegno NANOFORUM 2013 tenutosi a Rome nel 18 September 2013 through 20 September 2013) [10.1063/1.4883036].
Atomistic characterization of SAM coatings as gate insulators in Si-based FET devices
GALA, FABRIZIO;ZOLLO, Giuseppe
2014
Abstract
Many nano-material systems are currently under consideration as possible candidates for gate dielectric insulators in both metal-oxide-semiconductor (MOSFET) and organic (OFET) field-effect transistors. In this contribution, the possibility of employing self-assembled monolayers (SAMs) of hydroxylated octadecyltrichlorosilane (OTS) chains on a (111) Si substrate as gate dielectrics is discussed; in particular ab initio theoretical simulations have been employed to study the structural properties, work function modifications, and the insulating properties of OTS thin film coatings on Si substrates. © 2014 AIP Publishing LLC.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.