Many nano-material systems are currently under consideration as possible candidates for gate dielectric insulators in both metal-oxide-semiconductor (MOSFET) and organic (OFET) field-effect transistors. In this contribution, the possibility of employing self-assembled monolayers (SAMs) of hydroxylated octadecyltrichlorosilane (OTS) chains on a (111) Si substrate as gate dielectrics is discussed; in particular ab initio theoretical simulations have been employed to study the structural properties, work function modifications, and the insulating properties of OTS thin film coatings on Si substrates. © 2014 AIP Publishing LLC.

Atomistic characterization of SAM coatings as gate insulators in Si-based FET devices / Gala, Fabrizio; Zollo, Giuseppe. - STAMPA. - 1603:(2014), pp. 3-13. (Intervento presentato al convegno NANOFORUM 2013 tenutosi a Rome nel 18 September 2013 through 20 September 2013) [10.1063/1.4883036].

Atomistic characterization of SAM coatings as gate insulators in Si-based FET devices

GALA, FABRIZIO;ZOLLO, Giuseppe
2014

Abstract

Many nano-material systems are currently under consideration as possible candidates for gate dielectric insulators in both metal-oxide-semiconductor (MOSFET) and organic (OFET) field-effect transistors. In this contribution, the possibility of employing self-assembled monolayers (SAMs) of hydroxylated octadecyltrichlorosilane (OTS) chains on a (111) Si substrate as gate dielectrics is discussed; in particular ab initio theoretical simulations have been employed to study the structural properties, work function modifications, and the insulating properties of OTS thin film coatings on Si substrates. © 2014 AIP Publishing LLC.
2014
NANOFORUM 2013
insulators; surface physics; self-assembling monolayers; ab initio calculations
04 Pubblicazione in atti di convegno::04b Atto di convegno in volume
Atomistic characterization of SAM coatings as gate insulators in Si-based FET devices / Gala, Fabrizio; Zollo, Giuseppe. - STAMPA. - 1603:(2014), pp. 3-13. (Intervento presentato al convegno NANOFORUM 2013 tenutosi a Rome nel 18 September 2013 through 20 September 2013) [10.1063/1.4883036].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/688655
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