We have investigated the effect of light-soaking on the p-doped layer of amorphous silicon (a-Si:H) solar cells by low temperature (50-300 K) AC conductance measurements. The experimental results are interpreted on the basis of an equilibration model of the doped material. The model takes into account the finite dimension of the layer and its presence inside a complex structure. It is shown that the Fermi level shifts after light soaking, which can result in activation of the doping impurities.

Activation of dopant in the p-layer of amorphous silicon solar cells under illumination / Caputo, Domenico; DE CESARE, Giampiero. - In: SOLAR ENERGY MATERIALS AND SOLAR CELLS. - ISSN 0927-0248. - 43:3(1996), pp. 263-272. [10.1016/0927-0248(96)00005-0]

Activation of dopant in the p-layer of amorphous silicon solar cells under illumination

CAPUTO, Domenico;DE CESARE, Giampiero
1996

Abstract

We have investigated the effect of light-soaking on the p-doped layer of amorphous silicon (a-Si:H) solar cells by low temperature (50-300 K) AC conductance measurements. The experimental results are interpreted on the basis of an equilibration model of the doped material. The model takes into account the finite dimension of the layer and its presence inside a complex structure. It is shown that the Fermi level shifts after light soaking, which can result in activation of the doping impurities.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11573/68101
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