A new two-terminal switching device based on an a-Si : H n-i-δp-i-n symmetrical structure is investigated. The current through the device arises from thermionic emission of electrons over the triangular barrier lowered by the applied voltage. The key role of the thickness and of the doping level of the central δp layer on the electrical behavior of the device is analyzed in detail by a numerical model. The current-voltage characteristic of an optimized device exibits an ON/OFF current ratio, taken at 3 and 1 V, respectively, of six orders of magnitude with a nonlinearity factor η = 3.7. © 1996 IEEE.

A switching device based on a-Si:H n-i-δp-i-n stacked structure: modeling and characterization / Caputo, Domenico; DE CESARE, Giampiero. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 43:12(1996), pp. 2109-2112. [10.1109/16.544381]

A switching device based on a-Si:H n-i-δp-i-n stacked structure: modeling and characterization

CAPUTO, Domenico;DE CESARE, Giampiero
1996

Abstract

A new two-terminal switching device based on an a-Si : H n-i-δp-i-n symmetrical structure is investigated. The current through the device arises from thermionic emission of electrons over the triangular barrier lowered by the applied voltage. The key role of the thickness and of the doping level of the central δp layer on the electrical behavior of the device is analyzed in detail by a numerical model. The current-voltage characteristic of an optimized device exibits an ON/OFF current ratio, taken at 3 and 1 V, respectively, of six orders of magnitude with a nonlinearity factor η = 3.7. © 1996 IEEE.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11573/68100
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