A method for manufacturing a solar cell includes providing a first conductivity type doped crystalline silicon wafer, depositing on one side a first intrinsic a-Si:H buffer layer, followed by a second conductivity type doped a-Si:H layer, turning over the wafer and depositing on the opposite side a surface passivating anti-reflection coating, applying a first mask having a grid opening on the second conductivity type doped a-Si:H covered surface of the wafer, dry etching to remove the second conductivity type doped a-Si:H layer not covered by the first mask, while maintaining the first mask in position: depositing a second intrinsic buffer layer of a-Si:H, depositing a first conductivity type doped a-Si:H layer
Method of manufacturing an amorphous/crystalline silicon heterojunction solar cell / Mario, Tucci; Simona De, Iuliis; Lambert Johan, Geerligs; Luca, Serenelli; Enrico, Salza; Luisa, Pirozzi; Caputo, Domenico; DE CESARE, Giampiero. - (2012).
Method of manufacturing an amorphous/crystalline silicon heterojunction solar cell
CAPUTO, Domenico;DE CESARE, Giampiero
2012
Abstract
A method for manufacturing a solar cell includes providing a first conductivity type doped crystalline silicon wafer, depositing on one side a first intrinsic a-Si:H buffer layer, followed by a second conductivity type doped a-Si:H layer, turning over the wafer and depositing on the opposite side a surface passivating anti-reflection coating, applying a first mask having a grid opening on the second conductivity type doped a-Si:H covered surface of the wafer, dry etching to remove the second conductivity type doped a-Si:H layer not covered by the first mask, while maintaining the first mask in position: depositing a second intrinsic buffer layer of a-Si:H, depositing a first conductivity type doped a-Si:H layerI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.