Structural, optical and electronic properties of wide band gap amorphous carbon-silicon alloys

Hydrogenated carbon-silicon alloys with carbon fraction X(C) between 0.2 and 0.8 have been deposited and characterized. For X(C) less-than-or-equal-to 0.5 it is shown that Si/SiC phases whose electronic properties can be optimized by using an H-2 dilution higher than 90% and a substrate temperature T(d) almost-equal-to 300-degrees-C are preferentially deposited. For X(C) > 0.5 the deposited material contains polymer-like phases which are responsible for high optical transparency and poor electronic properties.