Hydrogenated carbon-silicon alloys with carbon fraction X(C) between 0.2 and 0.8 have been deposited and characterized. For X(C) less-than-or-equal-to 0.5 it is shown that Si/SiC phases whose electronic properties can be optimized by using an H-2 dilution higher than 90% and a substrate temperature T(d) almost-equal-to 300-degrees-C are preferentially deposited. For X(C) > 0.5 the deposited material contains polymer-like phases which are responsible for high optical transparency and poor electronic properties.
Structural, optical and electronic properties of wide band gap amorphous carbon-silicon alloys / DE CESARE, Giampiero; F., Galluzzi; G., Guattari; G., Leo; R., Vincenzoni. - In: DIAMOND AND RELATED MATERIALS. - ISSN 0925-9635. - STAMPA. - 2:5-7(1993), pp. 773-777. [10.1016/0925-9635(93)90221-M]
Structural, optical and electronic properties of wide band gap amorphous carbon-silicon alloys
DE CESARE, Giampiero;
1993
Abstract
Hydrogenated carbon-silicon alloys with carbon fraction X(C) between 0.2 and 0.8 have been deposited and characterized. For X(C) less-than-or-equal-to 0.5 it is shown that Si/SiC phases whose electronic properties can be optimized by using an H-2 dilution higher than 90% and a substrate temperature T(d) almost-equal-to 300-degrees-C are preferentially deposited. For X(C) > 0.5 the deposited material contains polymer-like phases which are responsible for high optical transparency and poor electronic properties.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
