Two-dimensional amorphous silicon alloy image sensors have been developed. We have built a demonstration device on a 9×9cm2 area, having a 500μm pixel pitch. The pixel is based on a TCO-p-i-n-i-p-Metal structure. The p-i-n photodiodes (PD) are the photo-sensing elements and are stacked and back-to-back connected to n-i-p blocking diodes (BD), which perform the addressing and the connection of the PDs to a data bus. Due to an optimization of the thickness and of the energy gap of the a-Si:H layers, we obtained a rectification ratio If/Ir≈104 between the current levels in forward (If) and reverse (Ir) bias conditions, under 100lux green illumination. The binary detection of a light level has been performed at a scanning rate of 5.4 Mpixel/sec
Two dimensional image sensor based on amorphous silicon alloy pin diode / DE CESARE, Giampiero; P., Di Rosa; S., La Monica; R., Salotti; Schirone, Luigi; G., Saggio; E., Verona. - In: JOURNAL OF NON-CRYSTALLINE SOLIDS. - ISSN 0022-3093. - STAMPA. - 164-166:2(1993), pp. 789-792. [10.1016/0022-3093(93)91115-J]
Two dimensional image sensor based on amorphous silicon alloy pin diode
DE CESARE, Giampiero;SCHIRONE, Luigi;
1993
Abstract
Two-dimensional amorphous silicon alloy image sensors have been developed. We have built a demonstration device on a 9×9cm2 area, having a 500μm pixel pitch. The pixel is based on a TCO-p-i-n-i-p-Metal structure. The p-i-n photodiodes (PD) are the photo-sensing elements and are stacked and back-to-back connected to n-i-p blocking diodes (BD), which perform the addressing and the connection of the PDs to a data bus. Due to an optimization of the thickness and of the energy gap of the a-Si:H layers, we obtained a rectification ratio If/Ir≈104 between the current levels in forward (If) and reverse (Ir) bias conditions, under 100lux green illumination. The binary detection of a light level has been performed at a scanning rate of 5.4 Mpixel/secI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
