The electrical behaviour of metal/diamond/silicon structures was investigated by current-voltage measurements as a function of temperature in the range 20-270 degrees C. The results were related to the morphology and composition of the diamond film by a nonlinear electrical model, taking into account both a temperature-independent conductance through highly defective regions and a temperature-dependent field-activated conductance through bulk diamond grains.
On the Electrical Properties of Polycrystalline Diamond on Silicon / DE CESARE, Giampiero; S., Salvatori; R., Vincenzoni; P., Ascarelli; E., Cappelli; F., Galluzzi. - In: DIAMOND AND RELATED MATERIALS. - ISSN 0925-9635. - STAMPA. - 4:5-6(1995), pp. 628-631. [10.1016/0925-9635(94)05294-8]
On the Electrical Properties of Polycrystalline Diamond on Silicon
DE CESARE, Giampiero;
1995
Abstract
The electrical behaviour of metal/diamond/silicon structures was investigated by current-voltage measurements as a function of temperature in the range 20-270 degrees C. The results were related to the morphology and composition of the diamond film by a nonlinear electrical model, taking into account both a temperature-independent conductance through highly defective regions and a temperature-dependent field-activated conductance through bulk diamond grains.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
