The use of thin films of amorphous silicon and amorphous silicon carbide as active materials drives to innovative families of photodiodes with excellent sensitivity in the extreme UV spectral range and quasitransparent to the visible radiation. In the present devices, quantity efficiency (QE) values of 21% and 0.08% have been measured at 120 and 750 nm, respectively, demonstrating also an excellent selectivity.

Amorphous Silicon/Silicon Carbide Photodetectors With Excellent Sensitivity and Selectivity in the Vacuum Ultraviolet Spectrum / DE CESARE, Giampiero; Irrera, Fernanda; Palma, Fabrizio; M., Tucci; G., Naletto; P., Nicolosi; E., Jannitti. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 67:3(1995), pp. 335-337. [10.1063/1.115436]

Amorphous Silicon/Silicon Carbide Photodetectors With Excellent Sensitivity and Selectivity in the Vacuum Ultraviolet Spectrum

DE CESARE, Giampiero;IRRERA, Fernanda;PALMA, Fabrizio;
1995

Abstract

The use of thin films of amorphous silicon and amorphous silicon carbide as active materials drives to innovative families of photodiodes with excellent sensitivity in the extreme UV spectral range and quasitransparent to the visible radiation. In the present devices, quantity efficiency (QE) values of 21% and 0.08% have been measured at 120 and 750 nm, respectively, demonstrating also an excellent selectivity.
1995
01 Pubblicazione su rivista::01a Articolo in rivista
Amorphous Silicon/Silicon Carbide Photodetectors With Excellent Sensitivity and Selectivity in the Vacuum Ultraviolet Spectrum / DE CESARE, Giampiero; Irrera, Fernanda; Palma, Fabrizio; M., Tucci; G., Naletto; P., Nicolosi; E., Jannitti. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 67:3(1995), pp. 335-337. [10.1063/1.115436]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/674449
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