Amorphous hydrogenated silicon carbide (a-SiC:H) thin films were crystallized by laser treatment. The samples, with a carbon content in the range 0%-50%, were deposited onto Si (100) wafers by plasma enhanced chemical vapor deposition. Various techniques, such as X-ray photoelectron spectroscopy (XPS), infrared (IR) transmission spectroscopy, optical microscopy, and microhardness measurements were used to characterize the laser-induced composition evolution and crystallization processes. The characteristics of the crystallized samples are promising for application as protective coatings for devices used in severe operating conditions
Crystallization of Amorphous Silicon Carbide Thin Films by Laser Treatments / DE CESARE, Giampiero; S., La Monica; G., Maiello; E., Proverbio; Ferrari, Aldo; M., Dinescu; N., Chitica; I., Morjan; A., Andrei. - In: SURFACE & COATINGS TECHNOLOGY. - ISSN 0257-8972. - STAMPA. - 80:1-2(1996), pp. 237-241. [10.1016/0257-8972(95)02720-3]
Crystallization of Amorphous Silicon Carbide Thin Films by Laser Treatments
DE CESARE, Giampiero;FERRARI, Aldo;
1996
Abstract
Amorphous hydrogenated silicon carbide (a-SiC:H) thin films were crystallized by laser treatment. The samples, with a carbon content in the range 0%-50%, were deposited onto Si (100) wafers by plasma enhanced chemical vapor deposition. Various techniques, such as X-ray photoelectron spectroscopy (XPS), infrared (IR) transmission spectroscopy, optical microscopy, and microhardness measurements were used to characterize the laser-induced composition evolution and crystallization processes. The characteristics of the crystallized samples are promising for application as protective coatings for devices used in severe operating conditionsI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
