Hydrogenated amorphous silicon films 0.45 and 1.12 mu m thick, grown by RF glow discharge plasma PECVD on Coming-7059 glass, were irradiated by a Co-60 source (activity 2.8 x 10(15) Bq) in the dose range 10-450 kGy at different dose rates. The dark current of the samples, under 100 V applied voltage, was measured before, during and af:er gamma irradiation. When the irradiation starts, the dark current increases up to a level linearly dependent on the dose rate. When the irradiation is switched off, the dark current returns close to the initial value in a few days. Such behaviour suggests a possible application of hydrogenated amorphous silicon films in dosimetry and as gamma ray sensors. Moreover, the film optical constants were computed from the transmittance spectra measured in the range 500-2500 nm, before and after irradiation. After irradiation, the film optical absorption is slightly increased and the energy gap is substantially unchanged
Conductivity Effects in Hydrogented Amorphous Silicon Induced by Gamma-Ray Irradiation / S., Baccaro; DE CESARE, Giampiero; G., Maiello; G., Masini; M., Montecchi; M., Petti; Ferrari, Aldo. - In: SENSORS AND ACTUATORS. B, CHEMICAL. - ISSN 0925-4005. - STAMPA. - 31:1-2(1996), pp. 107-109. [10.1016/0925-4005(96)80024-4]
Conductivity Effects in Hydrogented Amorphous Silicon Induced by Gamma-Ray Irradiation
DE CESARE, Giampiero;FERRARI, Aldo
1996
Abstract
Hydrogenated amorphous silicon films 0.45 and 1.12 mu m thick, grown by RF glow discharge plasma PECVD on Coming-7059 glass, were irradiated by a Co-60 source (activity 2.8 x 10(15) Bq) in the dose range 10-450 kGy at different dose rates. The dark current of the samples, under 100 V applied voltage, was measured before, during and af:er gamma irradiation. When the irradiation starts, the dark current increases up to a level linearly dependent on the dose rate. When the irradiation is switched off, the dark current returns close to the initial value in a few days. Such behaviour suggests a possible application of hydrogenated amorphous silicon films in dosimetry and as gamma ray sensors. Moreover, the film optical constants were computed from the transmittance spectra measured in the range 500-2500 nm, before and after irradiation. After irradiation, the film optical absorption is slightly increased and the energy gap is substantially unchangedI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
