Pulsed laser irradiation at low incident fluences was demonstrated to be effective for the crystallization of amorphous hydrogenated silicon carbide (a-SiC:H) films deposited on Si wafers, The amorphous films, with a carbon content in the range 30-50%, were deposited on (100) Si wafers by low temperature plasma enhanced chemical vapor deposition (PECVD). The crystallization treatment was carried out by a multipulse KrF excimer laser, The crystallinity modifications induced by the laser treatment were evidenced by Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction. An important increase of the microhardness was evidenced as an effect of the laser treatment

Crystallization of Silicon Carbide Thin Film by Pulsed Laser Irradiation / DE CESARE, Giampiero; S., La Monica; G., Maiello; G., Masini; E., Proverbio; Ferrari, Aldo; N., Chitica; M., Dinescu; R., Alexandrescu; I., Morjan; E., Rotiu. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - STAMPA. - 106(1996), pp. 193-197. [10.1016/S0169-4332(96)00399-6]

Crystallization of Silicon Carbide Thin Film by Pulsed Laser Irradiation

DE CESARE, Giampiero;FERRARI, Aldo;
1996

Abstract

Pulsed laser irradiation at low incident fluences was demonstrated to be effective for the crystallization of amorphous hydrogenated silicon carbide (a-SiC:H) films deposited on Si wafers, The amorphous films, with a carbon content in the range 30-50%, were deposited on (100) Si wafers by low temperature plasma enhanced chemical vapor deposition (PECVD). The crystallization treatment was carried out by a multipulse KrF excimer laser, The crystallinity modifications induced by the laser treatment were evidenced by Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction. An important increase of the microhardness was evidenced as an effect of the laser treatment
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11573/671837
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