Pulsed laser irradiation at low incident fluences was demonstrated to be effective for the crystallization of amorphous hydrogenated silicon carbide (a-SiC:H) films deposited on Si wafers, The amorphous films, with a carbon content in the range 30-50%, were deposited on (100) Si wafers by low temperature plasma enhanced chemical vapor deposition (PECVD). The crystallization treatment was carried out by a multipulse KrF excimer laser, The crystallinity modifications induced by the laser treatment were evidenced by Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction. An important increase of the microhardness was evidenced as an effect of the laser treatment
Crystallization of Silicon Carbide Thin Film by Pulsed Laser Irradiation / DE CESARE, Giampiero; S., La Monica; G., Maiello; G., Masini; E., Proverbio; Ferrari, Aldo; N., Chitica; M., Dinescu; R., Alexandrescu; I., Morjan; E., Rotiu. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - STAMPA. - 106:(1996), pp. 193-197. [10.1016/S0169-4332(96)00399-6]
Crystallization of Silicon Carbide Thin Film by Pulsed Laser Irradiation
DE CESARE, Giampiero;FERRARI, Aldo;
1996
Abstract
Pulsed laser irradiation at low incident fluences was demonstrated to be effective for the crystallization of amorphous hydrogenated silicon carbide (a-SiC:H) films deposited on Si wafers, The amorphous films, with a carbon content in the range 30-50%, were deposited on (100) Si wafers by low temperature plasma enhanced chemical vapor deposition (PECVD). The crystallization treatment was carried out by a multipulse KrF excimer laser, The crystallinity modifications induced by the laser treatment were evidenced by Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction. An important increase of the microhardness was evidenced as an effect of the laser treatmentI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
