We present a self-consistent approach to describe ambipolar tunnelling in asymmetrical double quantum wells under steady-state excitation and extend the results to the case of tunnelling from a near-surface quantum well to surface states. The results of the model compare very well with the behaviour observed in photoluminescence experiments in InGaAs/lnP asymmetric double quantum wells and in near-surface AIGaAs/GaAs single quantum wells.
SELF-CONSISTENT MODEL FOR AMBIPOLAR TUNNELING IN QUANTUM-WELL SYSTEMS / Presilla, Carlo; Emiliani, V; Frova, A.. - In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - ISSN 0268-1242. - 10:(1995), pp. 577-585. [10.1088/0268-1242/10/5/002]
SELF-CONSISTENT MODEL FOR AMBIPOLAR TUNNELING IN QUANTUM-WELL SYSTEMS
PRESILLA, Carlo;
1995
Abstract
We present a self-consistent approach to describe ambipolar tunnelling in asymmetrical double quantum wells under steady-state excitation and extend the results to the case of tunnelling from a near-surface quantum well to surface states. The results of the model compare very well with the behaviour observed in photoluminescence experiments in InGaAs/lnP asymmetric double quantum wells and in near-surface AIGaAs/GaAs single quantum wells.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
