We study the photoluminescence from a near-surface quantum well in the regime of ambipolar tunneling to the surface states. Under steady-state excitation an electric field develops self-consistently due to the condition of equal tunneling currents for electrons and holes. The field induces a Stark shift of the photoluminescence signal which compares well with experi- mental data from near-surface GaAs/AlGaAs single quantum wells.
Ambipolar tunneling in near-surface quantum wells / Emiliani, V; Frova, A; Presilla, Carlo. - In: SUPERLATTICES AND MICROSTRUCTURES. - ISSN 0749-6036. - 20:(1996), pp. 1-6. [10.1006/spmi.1996.0043]
Ambipolar tunneling in near-surface quantum wells
PRESILLA, Carlo
1996
Abstract
We study the photoluminescence from a near-surface quantum well in the regime of ambipolar tunneling to the surface states. Under steady-state excitation an electric field develops self-consistently due to the condition of equal tunneling currents for electrons and holes. The field induces a Stark shift of the photoluminescence signal which compares well with experi- mental data from near-surface GaAs/AlGaAs single quantum wells.File allegati a questo prodotto
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