Foreseen operation at sub-THz frequencies of Schottky contacts for diodes and transistor gates on GaAs based heterostructures requires area reduction down to 0.1×1 microns, and wet chemical processes. We report on the compatibility of Trilayer Electron-beam Lithography with such wet processes. © 2010 IEEE.

Trilayer electron-beam lithography and surface preparation for sub-micron Schottky contacts on GaAs heterostructures / D., D., R., C., V., F., Ortolani, M., A., N., C., L., M., P., P., R., E., G.. - (2010). (IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves Rome; Italy 2010) [10.1109/ICIMW.2010.5612783].

Trilayer electron-beam lithography and surface preparation for sub-micron Schottky contacts on GaAs heterostructures

ORTOLANI, MICHELE;
2010

Abstract

Foreseen operation at sub-THz frequencies of Schottky contacts for diodes and transistor gates on GaAs based heterostructures requires area reduction down to 0.1×1 microns, and wet chemical processes. We report on the compatibility of Trilayer Electron-beam Lithography with such wet processes. © 2010 IEEE.
2010
IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves
Area reduction; GaAs; Heterostructures
04 Pubblicazione in atti di convegno::04b Atto di convegno in volume
Trilayer electron-beam lithography and surface preparation for sub-micron Schottky contacts on GaAs heterostructures / D., D., R., C., V., F., Ortolani, M., A., N., C., L., M., P., P., R., E., G.. - (2010). (IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves Rome; Italy 2010) [10.1109/ICIMW.2010.5612783].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/649671
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