We demonstrate a rectification mechanism based on quantum tunneling through the narrow Schottky barrier of a sub-micrometric Au/Ti/n-GaAs junction, which is capable of efficient power detection of free-space terahertz radiation beams even without an applied dc bias. Three-dimensional shaping of the junction geometry provides an enhanced zero-bias tunneling probability due to increased electric fields at the junction, resulting in cutoff frequencies up to 0.55 THz, responsivity up to 200 V/W, and noise equivalent power better than 10 -9 W/Hz 0.5 without applied dc bias.

Three-dimensional shaping of sub-micron GaAs Schottky junctions for zero-bias terahertz rectification / R., Casini; A., Di Gaspare; E., Giovine; A., Notargiacomo; Ortolani, Michele; V., Foglietti. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 99:(2011), p. 263505. [10.1063/1.3672439]

Three-dimensional shaping of sub-micron GaAs Schottky junctions for zero-bias terahertz rectification

ORTOLANI, MICHELE;
2011

Abstract

We demonstrate a rectification mechanism based on quantum tunneling through the narrow Schottky barrier of a sub-micrometric Au/Ti/n-GaAs junction, which is capable of efficient power detection of free-space terahertz radiation beams even without an applied dc bias. Three-dimensional shaping of the junction geometry provides an enhanced zero-bias tunneling probability due to increased electric fields at the junction, resulting in cutoff frequencies up to 0.55 THz, responsivity up to 200 V/W, and noise equivalent power better than 10 -9 W/Hz 0.5 without applied dc bias.
2011
semiconductors
01 Pubblicazione su rivista::01a Articolo in rivista
Three-dimensional shaping of sub-micron GaAs Schottky junctions for zero-bias terahertz rectification / R., Casini; A., Di Gaspare; E., Giovine; A., Notargiacomo; Ortolani, Michele; V., Foglietti. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 99:(2011), p. 263505. [10.1063/1.3672439]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/649657
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