We measured the non-radiative intersubband relaxation time in n-type modulation-doped Ge/SiGe multi-quantum wells of different thickness by means of degenerate pump-probe experiments. The photon energy was tuned to be resonant with the lowest conduction band intersubband transition energy (14-29 meV), as measured by terahertz absorption spectroscopy and in agreement with band structure calculations. Temperature-independent lifetimes in excess of 30 ps were observed. (C) 2011 American Institute of Physics. [doi:10.1063/1.3662394]

Long intersubband relaxation times in n-type germanium quantum wells / Ortolani, Michele; Dominik, Stehr; Martin, Wagner; Manfred, Helm; Giovanni, Pizzi; Michele, Virgilio; Giuseppe, Grosso; Giovanni, Capellini; Monica De, Seta. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 99:20(2011), p. 201101. [10.1063/1.3662394]

Long intersubband relaxation times in n-type germanium quantum wells

ORTOLANI, MICHELE;
2011

Abstract

We measured the non-radiative intersubband relaxation time in n-type modulation-doped Ge/SiGe multi-quantum wells of different thickness by means of degenerate pump-probe experiments. The photon energy was tuned to be resonant with the lowest conduction band intersubband transition energy (14-29 meV), as measured by terahertz absorption spectroscopy and in agreement with band structure calculations. Temperature-independent lifetimes in excess of 30 ps were observed. (C) 2011 American Institute of Physics. [doi:10.1063/1.3662394]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/649649
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