We report on the fabrication and electrical characterization of Schottky diodes on epitaxial relaxed germanium for THz detection, which implement both a sub-micron junction area and the air-bridge technology. The small footprint necessary for low capacitances and T-shaped contacts are obtained by using a triple layer of electronic resists with different sensitivity. The cross-sectional analyses revealed a clearly suspended air-bridge and the T-shape of the metal contact with footprint width below 400 rim. The electrical characterization at room temperature shows well defined Schottky diode behavior with ideality factor between 1 and 2 and low series resistance suitable for THz detection. (C) 2013 Elsevier B.V. All rights reserved.
Fabrication of air-bridge sub-micron Schottky junctions on Ge/SOI for THz detection / R., B., Giovine, E., S., C., A., D.G., R., C., Ortolani, M., V., F., F., E., A., N.. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - STAMPA. - 110:(2013), pp. 470-473. (MNE 2013 ) [10.1016/j.mee.2013.04.017].
Fabrication of air-bridge sub-micron Schottky junctions on Ge/SOI for THz detection
GIOVINE, ennio;ORTOLANI, MICHELE;
2013
Abstract
We report on the fabrication and electrical characterization of Schottky diodes on epitaxial relaxed germanium for THz detection, which implement both a sub-micron junction area and the air-bridge technology. The small footprint necessary for low capacitances and T-shaped contacts are obtained by using a triple layer of electronic resists with different sensitivity. The cross-sectional analyses revealed a clearly suspended air-bridge and the T-shape of the metal contact with footprint width below 400 rim. The electrical characterization at room temperature shows well defined Schottky diode behavior with ideality factor between 1 and 2 and low series resistance suitable for THz detection. (C) 2013 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
