We present the realization of high electron mobility transistors on GaN-heterostructures usable for mixing and rectification in the THz range. Device fabrication is fully compatible with industrial processes employed for millimetre wave integrated circuits. On-chip, integrated, polarization- sensitive, planar antennas were designed to allow selective coupling of THz radiation to the three terminals of field effect transistors in order to explore different mixing schemes for frequencies well above the cutoff frequency for amplification. The polarization dependence of the spectral response in the 0.18-0.40 THz range clearly demonstrated the possible use as integrated heterodyne mixers. © 2013 Copyright SPIE.
Antenna-coupled heterostructure field effect transistors for integrated terahertz heterodyne mixers / Alessandra Di, Gaspare; Giliberti, Valeria; Roberto, Casini; Giovine, Ennio; Florestanto, Evangelisti; Dominique, Coquillat; Wojciech, Knap; Sergey, Sadofev; Raffaella, Calarco; Massimiliano, Dispenza; Claudio, Lanzieri; Ortolani, Michele. - STAMPA. - 8624:(2013), p. 862416. (Intervento presentato al convegno 2013 Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VI Conference tenutosi a San Francisco, CA nel 5 February 2013 through 7 February 2013) [10.1117/12.2004087].
Antenna-coupled heterostructure field effect transistors for integrated terahertz heterodyne mixers
GILIBERTI, VALERIA;GIOVINE, ennio;ORTOLANI, MICHELE
2013
Abstract
We present the realization of high electron mobility transistors on GaN-heterostructures usable for mixing and rectification in the THz range. Device fabrication is fully compatible with industrial processes employed for millimetre wave integrated circuits. On-chip, integrated, polarization- sensitive, planar antennas were designed to allow selective coupling of THz radiation to the three terminals of field effect transistors in order to explore different mixing schemes for frequencies well above the cutoff frequency for amplification. The polarization dependence of the spectral response in the 0.18-0.40 THz range clearly demonstrated the possible use as integrated heterodyne mixers. © 2013 Copyright SPIE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
