We have fabricated AlGaAs/InGaAs/AlGaAs heterostructure field effect transistors (HFET) with integrated on-chip antennas and we have measured their optical responsivity when mounted in a in-house developed quasi-optical package with a silicon substrate lens © 2013 IEEE.
Responsivity at 0.27 THz of a heterostructure field effect transistor detector in a quasi-optical package / Giliberti, Valeria; Roberto, Casini; Alessandra Di, Gaspare; Alvydas, Lisauskas; Hartmut G., Roskos; Ortolani, Michele. - ELETTRONICO. - (2013), pp. 1-2. (Intervento presentato al convegno 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013 tenutosi a Mainz; Germany nel 1 September 2013 through 6 September 2013) [10.1109/irmmw-thz.2013.6665693].
Responsivity at 0.27 THz of a heterostructure field effect transistor detector in a quasi-optical package
GILIBERTI, VALERIA;ORTOLANI, MICHELE
2013
Abstract
We have fabricated AlGaAs/InGaAs/AlGaAs heterostructure field effect transistors (HFET) with integrated on-chip antennas and we have measured their optical responsivity when mounted in a in-house developed quasi-optical package with a silicon substrate lens © 2013 IEEE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
