The n-type Ge-on-Si epitaxial material platform enables a novel paradigm for plasmonics in the mid-infrared, prompting the future development of lab-on-a-chip and subwavelength vibrational spectroscopic sensors. In order to exploit this material, through proper electrodynamic design, it is mandatory to retrieve the dielectric constants of the thin Ge epilayers with high precision due to the difference from bulk Ge crystals. Here we discuss the procedure we have employed to extract the real and imaginary part of the dielectric constants from normal incidence reflectance measurements, by combining the standard multilayer fitting procedure based on the Drude model with Kramers-Kronig transformations of absolute reflectance data in the zero-transmission range of the thin film. © 2014 IEEE.

Mid-infrared plasmonic platform based on heavily doped epitaxial Ge-on-Si: Retrieving the optical constants of thin Ge epilayers / Baldassarre, Leonetta; Eugenio, Calandrini; Antonio, Samarelli; Kevin, Gallacher; Douglas J., Paul; Jacopo, Frigerio; Giovanni, Isella; Emilie, Sakat; Marco, Finazzi; Paolo, Biagioni; Ortolani, Michele. - ELETTRONICO. - (2014), pp. 1-3. (Intervento presentato al convegno 2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) tenutosi a Tucson; United States nel 14-19 settembre 2014) [10.1109/IRMMW-THz.2014.6956438].

Mid-infrared plasmonic platform based on heavily doped epitaxial Ge-on-Si: Retrieving the optical constants of thin Ge epilayers

BALDASSARRE, Leonetta;ORTOLANI, MICHELE
2014

Abstract

The n-type Ge-on-Si epitaxial material platform enables a novel paradigm for plasmonics in the mid-infrared, prompting the future development of lab-on-a-chip and subwavelength vibrational spectroscopic sensors. In order to exploit this material, through proper electrodynamic design, it is mandatory to retrieve the dielectric constants of the thin Ge epilayers with high precision due to the difference from bulk Ge crystals. Here we discuss the procedure we have employed to extract the real and imaginary part of the dielectric constants from normal incidence reflectance measurements, by combining the standard multilayer fitting procedure based on the Drude model with Kramers-Kronig transformations of absolute reflectance data in the zero-transmission range of the thin film. © 2014 IEEE.
2014
2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)
plasmonics; semiconductors; Fourier Transform Infrared
04 Pubblicazione in atti di convegno::04b Atto di convegno in volume
Mid-infrared plasmonic platform based on heavily doped epitaxial Ge-on-Si: Retrieving the optical constants of thin Ge epilayers / Baldassarre, Leonetta; Eugenio, Calandrini; Antonio, Samarelli; Kevin, Gallacher; Douglas J., Paul; Jacopo, Frigerio; Giovanni, Isella; Emilie, Sakat; Marco, Finazzi; Paolo, Biagioni; Ortolani, Michele. - ELETTRONICO. - (2014), pp. 1-3. (Intervento presentato al convegno 2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) tenutosi a Tucson; United States nel 14-19 settembre 2014) [10.1109/IRMMW-THz.2014.6956438].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/649396
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