We demonstrate that the emission characteristics of site-controlled InGaAs/GaAs single quantum dots embedded in photonic crystal slab cavities correspond to single confined excitons coupled to cavity modes, unlike previous reports of similar systems based on self-assembled quantum dots. By using polarization-resolved photoluminescence spectroscopy at different temperatures and a theoretical model, we show that the exciton-cavity interaction range is limited to the phonon sidebands. Photon-correlation and pump-power dependence experiments under nonresonant excitation conditions further establish that the cavity is fed only by a single exciton. © 2011 American Physical Society.
Phonon-mediated coupling of InGaAs/GaAs quantum-dot excitons to photonic crystal cavities / M., Calic; P., Gallo; Felici, Marco; K. A., Atlasov; B., Dwir; A., Rudra; G., Biasiol; L., Sorba; G., Tarel; V., Savona; E., Kapon. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - 106:22(2011), p. 227402. [10.1103/physrevlett.106.227402]
Phonon-mediated coupling of InGaAs/GaAs quantum-dot excitons to photonic crystal cavities
FELICI, Marco;
2011
Abstract
We demonstrate that the emission characteristics of site-controlled InGaAs/GaAs single quantum dots embedded in photonic crystal slab cavities correspond to single confined excitons coupled to cavity modes, unlike previous reports of similar systems based on self-assembled quantum dots. By using polarization-resolved photoluminescence spectroscopy at different temperatures and a theoretical model, we show that the exciton-cavity interaction range is limited to the phonon sidebands. Photon-correlation and pump-power dependence experiments under nonresonant excitation conditions further establish that the cavity is fed only by a single exciton. © 2011 American Physical Society.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
