In this work we present the design and fabrication of a Bragg reflector, formed on the rear side of an amorphous/crystalline silicon(a-Si/c-Si)n-a-Si/i- a-Si/p-c-Si heterostructure solar cell, in order to obtain an enhancement of the optical confinement of the near-infrared wavelength. The mirror has been grown alternating several couples of amorphous silicon/silicon nitride films whose thicknesses have been optimized, to maximize the reflectance inward the c-Si wafer, using an optical simulator. The cell back contact has been ensured by an Al diffusion into the c-Si wafer promoted by Nd-YAG pulsed laser. The front cell contact has been enhanced by a chromium silicide CrSi formed on top of the n-a-Si layer. A Voc of 681 mV and 94% of internal quantum efficiency at 1000 nm have been achieved. © 2008 IEEE.
Dielectric Bragg Back Reflecting Mirror in a-Si:H / c-Si Heterostructure Solar Cell / M., Tucci; L., Serenelli; P., Martufi; E., Salza; DE CESARE, Giampiero; Caputo, Domenico; M., Ceccarelli. - STAMPA. - (2008), pp. pp. 277--280,. (Intervento presentato al convegno Conference on Optoelectronic and Microelectronic Materials and Devices tenutosi a Sydney; Australia nel July 2008) [10.1109/COMMAD.2008.4802146].
Dielectric Bragg Back Reflecting Mirror in a-Si:H / c-Si Heterostructure Solar Cell
DE CESARE, Giampiero;CAPUTO, Domenico;
2008
Abstract
In this work we present the design and fabrication of a Bragg reflector, formed on the rear side of an amorphous/crystalline silicon(a-Si/c-Si)n-a-Si/i- a-Si/p-c-Si heterostructure solar cell, in order to obtain an enhancement of the optical confinement of the near-infrared wavelength. The mirror has been grown alternating several couples of amorphous silicon/silicon nitride films whose thicknesses have been optimized, to maximize the reflectance inward the c-Si wafer, using an optical simulator. The cell back contact has been ensured by an Al diffusion into the c-Si wafer promoted by Nd-YAG pulsed laser. The front cell contact has been enhanced by a chromium silicide CrSi formed on top of the n-a-Si layer. A Voc of 681 mV and 94% of internal quantum efficiency at 1000 nm have been achieved. © 2008 IEEE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
