Novel silicon photonics applications requiring heavy n-type doping have recently driven a great deal of interest towards the phosphorous doping of germanium. In this work we report on infrared reflectance spectroscopy measurements of the electron density in heavily n-type doped germanium layers obtained by stacking multiple phosphorous δ- layers. Here, we demonstrate that the conventional Drude model of the electrodynamic response of free carriers in metals can be adapted to describe heavily doped epitaxial Germanium.
Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy / E., Calandrini; Ortolani, Michele; Nucara, Alessandro; G., Scappucci; W. M., Klesse; M. Y., Simmons; L., Di Gaspare; M., de Seta; D., Sabbagh; G., Capellini; M., Virgilio; Baldassarre, Leonetta. - In: JOURNAL OF OPTICS. - ISSN 2040-8978. - STAMPA. - 16:(2014), pp. 094010-094022. [10.1088/2040-8978/16/9/094010]
Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy
ORTOLANI, MICHELE;NUCARA, Alessandro;BALDASSARRE, Leonetta
2014
Abstract
Novel silicon photonics applications requiring heavy n-type doping have recently driven a great deal of interest towards the phosphorous doping of germanium. In this work we report on infrared reflectance spectroscopy measurements of the electron density in heavily n-type doped germanium layers obtained by stacking multiple phosphorous δ- layers. Here, we demonstrate that the conventional Drude model of the electrodynamic response of free carriers in metals can be adapted to describe heavily doped epitaxial Germanium.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
