In this work we report studies on the non linear dependence of the optical gain with the incident power in an amorphous silicon bulk barrier phototransistor based on a n-i-p-i-n structure. The optical gain shows a quasi-hyperbolic dependence on the illumination intensity. The non-linear behavior was predicted by an analytical device model which takes into account the properties of both material and structure, which lead to the amplification mechanism of the device.
Non-linear optical gain in bulk barrier amorphous silicon phototransistor / Caputo, Domenico; DE CESARE, Giampiero; Nascetti, Augusto; Palma, Fabrizio. - 609:(2000). (Intervento presentato al convegno Materials Research Symposium Sprin Meeting tenutosi a San Francisco (CA) USA) [10.1557/PROC-609-A12.3].
Non-linear optical gain in bulk barrier amorphous silicon phototransistor
CAPUTO, Domenico;DE CESARE, Giampiero;NASCETTI, Augusto;PALMA, Fabrizio
2000
Abstract
In this work we report studies on the non linear dependence of the optical gain with the incident power in an amorphous silicon bulk barrier phototransistor based on a n-i-p-i-n structure. The optical gain shows a quasi-hyperbolic dependence on the illumination intensity. The non-linear behavior was predicted by an analytical device model which takes into account the properties of both material and structure, which lead to the amplification mechanism of the device.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
